Current Transport Modeling of Carbon Nanotubes

The purpose of this book is to develop a complete§current transport §model for carbon nanotube field effect transistors§(CNT-FETs), §applicable in the analysis and design of integrated§circuits. The §model is derived by investigating the electronic§structure of carbon §nanotubes and by using the basic laws of§electrostatics in a field §effect transistor. By describing the carrier§concentration and charge §distribution in carbon nanotubes, analytical§expressions for the §carbon nanotube potential are derived and used to§obtain current §transport equations for a CNT-FET. Threshold and§saturation §voltages expressions are each derived in the process§and I-V §characteristics for CNT-FETs are calculated using§different §combinations of chiral vectors. The voltage transfer§characteristics of §basic logic circuits based on complementary CNT-FETs§are also §studied. A small-signal radio frequency (rf) model is§developed and §it is shown to have cut-off frequencies in the upper§GHz range. §Finally, due to the rapid growth of carbon nanotubes§as bio- and §chemical sensing devices, possible methods to§interpret and analyze §CNT-FETs when utilized as biosensors are also presented.